丝印：G20M65DF2；Package：TO-220FP；Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT

Features • High short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 20 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode Applications • Motor control • UPS • PFC • General-purpose inverters Desc

文件：531.31 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：G20M65DF2；Package：TO-220；Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT

Features • High short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 20 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode Applications • Motor control • UPS • PFC • General-purpose inverters Des

文件：520.21 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体