丝印：G20N03；Package：DFN2X2-6L；N-Channel Enhancement Mode Power MOSFET

Description The G20N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：727.85 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G20N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G20N03K uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

文件：514.49 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G20N03；Package：DFN2X2-6L；N-Channel Enhancement Mode Power MOSFET

Description The G20N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：727.85 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G20N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G20N03K uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

文件：514.49 Kbytes 页数：6 Pages

GOFORD

谷峰半导体