丝印：G20M65DF2；Package：TO-220；Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT

Features • High short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 20 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode Applications • Motor control • UPS • PFC • General-purpose inverters Des

文件：520.21 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

沟槽栅场截止IGBT，M系列，650 V、20 A，低损耗

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthe • High short-circuit withstand time \n• VCE(sat) = 1.55 V (typ.) @ IC = 20 A \n• Tight parameters distribution \n• Safer paralleling \n• Low thermal resistance \n• Soft and very fast recovery antiparallel diode;

ST

意法半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT TRENCH 650V 40A TO220

STMICROELECTRONICS

意法半导体

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=1.55V@IC= 15A · High Current Capability · High Input Impedance · Low thermal resistance APPLICATIONS · Synchronous Rectification in SMPS · Motor Drives · UPS,PFC · General purpose inverter

文件：398.65 Kbytes 页数：6 Pages

ISC

无锡固电

Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT

Features • High short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 20 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode Applications • Motor control • UPS • PFC • General-purpose inverters Desc

文件：531.31 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体