STGB15M65DF2

Marking：G15M65DF2；Package：D2PAK；Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheMseries IGBTs,whichrepresentanoptimalbalance betweeninvertersystemperformanceand efficiencywherelow-lossandshort-circuit functionalityareess

STGW15H120DF2

Marking：G15H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThesedevicesarepartoftheimprovedHseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofhighfrequencyconver

STGW15H120F2

Marking：G15H120F2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.Thesedevicesarepartoftheimproved HseriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofhighfrequency co

STGW15M120DF3

Marking：G15M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThedeviceispartoftheMseriesofIGBTs,whichrepresentanoptimumcompromiseinperformancetomaximizetheefficiencyofinvertersystemswherelow-lossandshortcircuitcapability

STGW15S120DF3

Marking：G15S120DF3；Package：TO-247；Trench gate field-stop IGBT, S series 1200 V, 15 A low drop

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheSseriesof 1200VIGBTswhichistailoredtomaximize efficiencyoflowfrequencyindustrialsystems. Furthermore,apositiveVCE(sat)temperature coeffici

STGWA15H120DF2

Marking：G15H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThesedevicesarepartoftheimprovedHseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofhighfrequencyconver

STGWA15H120F2

Marking：G15H120F2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.Thesedevicesarepartoftheimproved HseriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofhighfrequency co

STGWA15M120DF3

Marking：G15M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThedeviceispartoftheMseriesofIGBTs,whichrepresentanoptimumcompromiseinperformancetomaximizetheefficiencyofinvertersystemswherelow-lossandshortcircuitcapability

STGWA15S120DF3

Marking：G15S120DF3；Package：TO-247；Trench gate field-stop IGBT, S series 1200 V, 15 A low drop

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheSseriesof 1200VIGBTswhichistailoredtomaximize efficiencyoflowfrequencyindustrialsystems. Furthermore,apositiveVCE(sat)temperature coeffici

STGWT15H60F

Marking：G15H60F；Package：TO-3P；Trench gate field-stop IGBT, H series 600 V, 15 A high speed

Features Highspeedswitching Tightparameterdistribution Safeparalleling Lowthermalresistance Short-circuitrated Applications Motorcontrol UPS PFC Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.Th