G1J

Marking：G1J；Package：SOD-123FL；Surface Mount General Purpose Rectifier G1A Through G1M

FEATURES Lowprofilepackage Idealforautomatedplacement Glasspassivatedchipjunction Highforwardsurgecapability MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

G1JFS

Marking：G1JFS；Package：SMAF；Surface Mount General Purpose Rectifier G1AFS Through G1MFS

FEATURES ●Lowprofilepackage ●Idealforautomatedplacement ●Glasspassivatedchipjunction ●Highforwardsurgecapability ●MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

G1K

Marking：G1K；Package：SOD-123FL；Surface Mount General Purpose Rectifier G1A Through G1M

FEATURES Lowprofilepackage Idealforautomatedplacement Glasspassivatedchipjunction Highforwardsurgecapability MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

G1K1P06HH

Marking：G1K1P06H；Package：SOT-223；P-Channel Enhancement Mode Power MOSFET

Description TheG1K1P06HHusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G1K1P06LH

Marking：G1K1P06；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

Description TheG1K1P06LHusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G1K1P06LL

Marking：G1K1P06；Package：SOT-23-6；P-Channel Enhancement Mode Power MOSFET

Description TheG1K1P06LLusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G1K1P10TE

Marking：G1K1P10；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description TheG1K1P10TEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G1K2C10S2

Marking：G1K2C10D；Package：SOP-8Dual；N and P Channel Enhancement Mode Power MOSFET

Description TheG1K2C10S2usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G1K3N10G

Marking：G1K3N10；Package：SOT-89；N-Channel Enhancement Mode Power MOSFET

Description TheG1K3N10Gusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G1K3N10LL

Marking：G1K3N10；Package：SOT-23-6L；N-Channel Enhancement Mode Power MOSFET

Description TheG1K3N10LLusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters