G1K6P15K

Marking：G1K6P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG1K6P15Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G1K8P06S2

Marking：G1K8P06D；Package：SOP-8Dual；DUAL P-Channel Enhancement Mode Power MOSFET

Description TheG1K8P06S2usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G1KFS

Marking：G1KFS；Package：SMAF；Surface Mount General Purpose Rectifier G1AFS Through G1MFS

FEATURES ●Lowprofilepackage ●Idealforautomatedplacement ●Glasspassivatedchipjunction ●Highforwardsurgecapability ●MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

G1M

Marking：G1M；Package：SOD-123FL；Surface Mount General Purpose Rectifier G1A Through G1M

FEATURES Lowprofilepackage Idealforautomatedplacement Glasspassivatedchipjunction Highforwardsurgecapability MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

G1MFS

Marking：G1MFS；Package：SMAF；Surface Mount General Purpose Rectifier G1AFS Through G1MFS

FEATURES ●Lowprofilepackage ●Idealforautomatedplacement ●Glasspassivatedchipjunction ●Highforwardsurgecapability ●MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

G1NP02LLE

Marking：G1NP02E；Package：SOT-23-6LDual；N and P Channel Enhancement Mode Power MOSFET

Description TheG1NP02LLEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

IGP10N60T

Marking：G10T60；Package：PG-TO-220-3；Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

Features: VerylowVCE(sat)1.5V(typ.) MaximumJunctionTemperature175°C Shortcircuitwithstandtime5s Designedfor: -VariableSpeedDriveforwashingmachinesandairconditioners -inductioncooking -UninterruptedPowerSupply TRENCHSTOP™andFieldstoptechnologyfor60

IGQ100N120S7

Marking：G100MS7；Package：PG-TO247-3-PLUS-NN3.7；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology

Features •VCE=1200V •IC=100A •LowsaturationvoltageVCEsat=2.0VatTvj=175°C •Shortcircuitruggedness8μs •Widerangeofdv/dtcontrollability •CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/ Potentialapplications •Industrialpowersupplies

LD1117A12K-08-RG30

Marking：G17G；Package：SOT-89；1 A Low Dropout Positive Voltage Regulator

Features •InputVoltageupto20V •OutputCurrentupto1A •LowDropOutputVoltage:Typical1.15Vat1Aoutputcurrent •OutputVoltageAccuracy:±1forfixedoutputVoltage1.5V,1.8V,2.5V,2.85V, 3.3V,5.0VandAdjustbleOutputVoltageVersion. ±2forfixedoutputVoltage1.2V •Trimme

LD1117A15K-08-RG30

Marking：G17B；Package：SOT-89；1 A Low Dropout Positive Voltage Regulator

Features •InputVoltageupto20V •OutputCurrentupto1A •LowDropOutputVoltage:Typical1.15Vat1Aoutputcurrent •OutputVoltageAccuracy:±1forfixedoutputVoltage1.5V,1.8V,2.5V,2.85V, 3.3V,5.0VandAdjustbleOutputVoltageVersion. ±2forfixedoutputVoltage1.2V •Trimme