STGYA120M65DF2AG

Marking：G120M65DF2AG；Package：Max247；Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package

Features •AEC-Q101qualified •6μsofshort-circuitwithstandtime •VCE(sat)=1.65V(typ.)@IC=120A •Tightparameterdistribution •Saferparalleling •PositiveVCE(sat)temperaturecoefficient •Lowthermalresistance •Softandveryfastrecoveryantiparalleldiode •Maximumj

TC1188-TECT

Marking：G1**；Package：SOT-25；MAX8863/64 Pin Compatible, Low Dropout, 120 mA Linear Regulators

GeneralDescription TheTC1188andTC1189arefixedoutput,lowdropoutlinearregulatorsthatoperatefroma2.7Vto6.0Vinputvoltagesource.Theoutputiscapableofdeliveringupto120mAwhileconsumingonly50µAofquiescentcurrent.Thelowdropoutvoltage,120mV,maketheTC1188andT

TPS3808EG125DBVR

Marking：G125；Package：SOT-23；TPS3808E Low-Quiescent-Current, Programmable-Delay Supervisory Circuit

1Features •Undervoltagemonitoringforpowerrails –Reliablemonitoringwithhighthreshold accuracy(1typical) –Fixedvoltagethresholdoptionsfrom0.9Vto5V –Adjustablevoltageoptionavailable(0.405) –SeparateSensepinformonitoringandVDDpin forpower –Devicetemperature

UMG11N

Marking：G11；Package：UMT5；Emitter common (dual digital transistors)

Emittercommon(dualdigitaltransistors) Features 1)TwoDTA123JschipsinaEMTorUMTorSMTpackage.

UPG153TB-E3

Marking：G1J；GaAs INTEGRATED CIRCUIT

FEATURES •LowInsertionLoss:LINS=0.7dBTYP.@VCONT=+3.0V/0V,f=2GHz •HighLinearitySwitching:Pin(1dB)=+33.0dBmTYP.@VCONT=+3.0V/0V,f=2GHz •Small6-pinsuperminimoldpackage(Size:2.0´1.25´0.9mm)

UPG158TB-E3

Marking：G1M；GaAs INTEGRATED CIRCUIT

FEATURES •Switchcontrolvoltage:Vcont(H)=2.5to5.3V(3.0VTYP.) :Vcont(L)=−0.2to+0.2V(0VTYP.) •Lowinsertionloss:LINS1=0.30dBTYP.@f=0.5to1.0GHz,Vcont=3.0V/0V :LINS2=0.40dBTYP.@f=2.0GHz,Vcont=3.0V/0V :LINS3=0.90dBMAX.@f=2.0to2.5

UPG2106TB-E3

Marking：G1V；GaAs INTEGRATED CIRCUITS

FEATURES •Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz •Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) •Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm •

UPG2110TB-E3

Marking：G1Y；GaAs INTEGRATED CIRCUITS

FEATURES •Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz •Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) •Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm •

XC7SET14GV

Marking：g14；Package：SOT753；Inverting Schmitt trigger

1.Generaldescription XC7SET14isahigh-speedSi-gateCMOSdevice.Itprovidesaninvertingbufferfunctionwith Schmitttriggeraction.Thisdeviceiscapableoftransformingslowlychanginginputsignalsinto sharplydefined,jitter-freeoutputsignals. 2.Featuresandbenefits .Symmetri

XC7WT14DP

Marking：g14；Package：SOT505-2；Triple inverting Schmitt trigger

1.Generaldescription TheXC7WT14isahigh-speedSi-gateCMOSdevice.Thisdeviceprovidesthreeinvertingbuffers withSchmitttriggeraction.Thisdeviceiscapableoftransformingslowlychanginginputsignalsinto sharplydefined,jitter-freeoutputsignals. 2.Featuresandbenefits •S