SGB15N60

Marking：G15N60；Package：TO-263-3；Fast IGBT in NPT-technology

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

SGL160N60UFD

Marking：G160N60；Package：TO-264；Ultrafast IGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeed

SGP15N60

Marking：G15N60；Package：TO-220-3-1；Fast IGBT in NPT-technology

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

SGP15N60

Marking：G15N60；Package：TO-220-3-1；Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

SGW15N60

Marking：G15N60；Package：TO-247-3-21；Fast IGBT in NPT-technology

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

SGW15N60

Marking：G15N60；Package：TO-247-3-21；Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

SI2351DS

Marking：G1***；Package：SOT-23；P-Channel 20-V (D-S) MOSFET

FEATURES •Halogen-freeOptionAvailable •TrenchFET®PowerMOSFET •PWMOptimized •100RgTested

SS10100FL-AU_R1_000A1

Marking：G10；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY DIODES

Features Lowforwardvoltagedrop Dealforautomatedplacement Lowpowerloss,highefficiency Highsurgecurrentcapability LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard AEC-Q101qualified

SS10150FL-AU

Marking：G15；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Lowpowerloss,highefficiency Highsurgecurrentcapability AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

STGB10M65DF2

Marking：G10M65DF2；Package：D2PAK；Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheMseries IGBTs,whichrepresentanoptimalbalance betweeninvertersystemperformanceand efficiencywherelow-lossandshort-circuit functionalityareess