丝印：G050；Package：Micro8；Current-Shunt Monitors, 40 V Common Mode, Unidirectional, Single, Dual, Quad

文件：873.15 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

丝印：G050；Package：Micro8；Current-Shunt Monitors, 40 V Common Mode, Unidirectional, Single, Dual, Quad

文件：873.15 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

丝印：G050N03；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G050N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.079 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G050P03；Package：DFN5/6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G050P03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：907.91 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G050P03；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G050P03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：579.64 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G050P03；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G050P03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.00091 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G050P03；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G050P03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：867.14 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G050N03；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G050N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.079 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G050P03；Package：DFN5/6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G050P03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：907.91 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G050P03；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G050P03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：579.64 Kbytes 页数：6 Pages

GOFORD

谷峰半导体