丝印：G050P03；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G050P03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.00091 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The G050P03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：867.14 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

RRH050P03

文件：179.72 Kbytes 页数：6 Pages

ROHM

罗姆

P-Channel MOSFET uses advanced trench technology

文件：1.50799 Mbytes 页数：5 Pages

DOINGTER

杜因特