丝印：G012N08；Package：TOLL；N-Channel Enhancement Mode MOSFET

Feature Pin Description  80V/420A RDS(ON)=0.9 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) Applications  Switching application  Power management for inverter systems  Battery management

文件：604.36 Kbytes 页数：9 Pages

HUAYI

华羿微电

N-Channel Enhancement Mode MOSFET

Feature Pin Description  80V/420A RDS(ON)=0.9 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) Applications  Switching application  Power management for inverter systems  Battery management

文件：604.36 Kbytes 页数：9 Pages

HUAYI

华羿微电