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20N06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

20N06

FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

20N06

20Amps,60VoltsN-CHANNELMOSFET

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

20N06

60VN-ChannelEnhancementModePowerMOSFET

Features VDS=60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired

UMWUMW

友台友台半导体

20N06B

20Amps,60VoltsN-CHANNELMOSFET

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

20N06F

20Amps,60VoltsN-CHANNELMOSFET

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

20N06H

20Amps,60VoltsN-CHANNELMOSFET

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

20N06HD

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

20N06HLD

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

20N06L

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

CEB20N06

N-ChannelEnhancementModeFieldEffectTransistor

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEB20N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,28A,RDS(ON)=40mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED20N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,20A,RDS(ON)=55mΩ@VGS=10V. RDS(ON)=75mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED20N06

N-ChannelEnhancementModeFieldEffectTransistor

ETC1List of Unclassifed Manufacturers

未分类制造商

CEP20N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,28A,RDS(ON)=40mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU20N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,20A,RDS(ON)=55mΩ@VGS=10V. RDS(ON)=75mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU20N06

N-ChannelEnhancementModeFieldEffectTransistor

ETC1List of Unclassifed Manufacturers

未分类制造商

CEU20N06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

CHM20N06PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT20Ampere FEATURE ​​​​​​​*Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO

CHENMKO

CJU20N06

N-ChannelPowerMOSFET

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

详细参数

  • 型号:

    FQP20N06_Q

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD
16+
TO-220
10000
全新原装现货
询价
FAIRCHILD
2020+
TO-220
210000
100%进口原装正品公司现货库存
询价
23+
N/A
85300
正品授权货源可靠
询价
FAIRCHILD/仙童
21+ROHS
TO-220
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ON
23+
TO-220
2347
专注配单,只做原装进口现货
询价
ON-安森美
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
ON
23+
TO-220
2347
专注配单,只做原装进口现货
询价
FAIRCHILD/仙童
23+
TO-220
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
2022
TO-220
80000
原装现货,OEM渠道,欢迎咨询
询价
仙童
05+
TO-220
5000
原装进口
询价
更多FQP20N06_Q供应商 更新时间2024-5-3 10:00:00