60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：664.69 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=17.2A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.06Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.52 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel QFET MOSFET 60 V, 17.2 A, 42 m

文件：1.29825 Mbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel QFET짰 MOSFET 60 V, 17.2 A, 42 m廓

文件：1.29825 Mbytes 页数：8 Pages

FAIRCHILD

仙童半导体

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：656.13 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

60V LOGIC N-Channel MOSFET

文件：860.93 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

100 Avalanche Tested

文件：892.59 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，17.2 A，42 mΩ，IPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •17.2A, 60V, RDS(on)= 42mΩ（最大值）@VGS = 10 V, ID = 8.6A栅极电荷低（典型值：9.5nC)\n•低 Crss（典型值35pF）\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体