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FDPF15N40

N-Channel MOSFET 400V, 15A, 0.3廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDPF15N40

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FGR15N40A

StrobeFlashN-ChannelLogicLevelIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGS15N40L

HighInputImpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features •HighInputImpedance •H

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGS15N40L

ElectricalCharacteristicsofIGBT

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features •HighInputImpedance •H

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGS15N40LTF

HighInputImpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features •HighInputImpedance •H

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGW15N40A

StrobeFlashN-ChannelLogicLevelIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MGB15N40CL

IgnitionIGBT15Amps,410Volts

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGB15N40CL

IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGC15N40CL

InternallyClampedN-ChannelIGBT

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    FDPF15N40

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    N-Channel MOSFET 400V, 15A, 0.3Ω

供应商型号品牌批号封装库存备注价格
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD/仙童
TO-220F
22+
6000
十年配单,只做原装
询价
FAIRCHILD/仙童
22+
TO-220F
25000
只做原装进口现货,专注配单
询价
FAIRCHILD/仙童
22+
TO-220F
25000
只做原装进口现货,专注配单
询价
FAIRCHILD
25+
TO-TO-220F
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
FAIRCHILD/仙童
23+
TO220F
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
23+
TO-TO-220F
12300
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
FAIRCHILD/仙童
24+
NA/
13818
优势代理渠道,原装正品,可全系列订货开增值税票
询价
FAIRCHILD/仙童
25+
TO220F
1500
原装正品,假一罚十!
询价
ONSEMI/安森美
24+
TO220F
60000
询价
更多FDPF15N40供应商 更新时间2025-5-29 16:53:00