FDMA1024NZ

Dual N-Channel PowerTrench짰 MOSFET 20 V, 5.0 A, 54 m廓

GeneralDescription ThisSingleN-ChannelMOSFEThasbeendesignedusingFairchildSemiconductor’sadvancedPowerTrenchprocesstooptimizetherDS(ON)@VGS=1.5VonspecialMicroFETleadframe. Features ■MaxrDS(on)=23mΩatVGS=4.5V,ID=9.5A ■MaxrDS(on)=29mΩatVGS=2.5V,

FDMA1025P

Dual P-Channel PowerTrench MOSFET -20V, -3.1A, 105mohm

GeneralDescription Thisdeviceisdesignedspecificallyasasinglepackagesolutionforthebatterychargeswitchincellularhandsetandotherultra-portableapplications.ItfeaturestwoindependentP-ChannelMOSFETswithlowon-stateresistanceforminimumconductionlosses.Whenconnected

FDMA1027P

Dual P-Channel PowerTrench MOSFET

GeneralDescription Thisdeviceisdesignedspecificallyasasinglepackagesolutionforthebatterychargeswitchincellularhandsetandotherultra-portableapplications.ItfeaturestwoindependentP-ChannelMOSFETswithlowon-stateresistanceforminimumconductionlosses.Whenconnectedi

FDMA1027PT

Dual P-Channel PowerTrench짰 MOSFET -20 V, -3 A, 120 m廓

GeneralDescription Thisdeviceisdesignedspecificallyasasinglepackagesolutionforthebatterychargeswitchincellularhandsetandotherultra-portableapplications.ItfeaturestwoindependentP-ChannelMOSFETswithlowon-stateresistanceforminimumconductionlosses.Whenconnectedi

FDMA1032CZ

20V Complementary PowerTrench MOSFET

GeneralDescription ThisdeviceisdesignedspecificallyasasinglepackagesolutionforaDC/DCSwitchingMOSFETincellularhandsetandotherultra-portableapplications.ItfeaturesanindependentN-Channel&P-ChannelMOSFETwithlowon-stateresistanceforminimumconductionlosses.The

FDMA3028N

Dual N-Channel PowerTrench짰 MOSFET 30 V, 3.8 A, 68 m廓

GeneralDescription Thisdeviceisdesignedspecificallyasasinglepackagesolutionfordualswitchingrequirementsincellularhandsetandotherultra-portableapplications.ItfeaturestwoindependentN-ChannelMOSFETswithlowon-stateresistanceforminimumconductionlosses.TheMicroFET2

FDMA410NZT

Marking：410T；Package：MicroFET2x2；MOSFET – N-Channel, POWERTRENCH, Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m

Description ThisSingleN−ChannelMOSFEThasbeendesignedusing ONSemiconductor’sadvancedPowerTrenchprocesstooptimizethe RDS(on)@VGS=1.5VonspecialMicroFETTMleadframe. ThisdesignissimilartotheFDMA410NZ,howeveritfeaturesour newadvanced0.55mmmax2x2MLPpackage

FDMA410NZT-F130

Marking：410T；Package：MicroFET2x2；MOSFET – N-Channel, POWERTRENCH, Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m

Description ThisSingleN−ChannelMOSFEThasbeendesignedusing ONSemiconductor’sadvancedPowerTrenchprocesstooptimizethe RDS(on)@VGS=1.5VonspecialMicroFETTMleadframe. ThisdesignissimilartotheFDMA410NZ,howeveritfeaturesour newadvanced0.55mmmax2x2MLPpackage

FDMA430NZ

Single N-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisSingleN-ChannelMOSFEThasbeendesignedusingFairchildSemiconductor’sadvancedPowerTrenchprocesstooptimizetheRDS(on)@VGS=2.5VonspecialMicroFETleadframe. Features ■RDS(on)=40mΩ@VGS=4.5V,ID=5.0A ■RDS(on)=50mΩ@VGS=2.5V,ID=4.5A ■Low

FDMA6023PZT

Dual P-Channel PowerTrench짰 MOSFET -20 V, -3.6 A, 60 m廓

GeneralDescription Thisdeviceisdesignedspecificallyasasinglepackagesolutionforthebatterychargeswitchincellularhandsetandotherultraportableapplications.ItfeaturestwoindependentP-ChannelMOSFETswithlowon-stateresistanceforminimumconductionlosses.Whenconnectedin