FDMA6023PZT中文资料仙童半导体数据手册PDF规格书

General Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.

The MicroFET 2X2 Thin package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.

特性 Features

■ Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A

■ Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A

■ Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A

■ Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A

■ Low Profile-0.55 mm maximum - in the new package

MicroFET 2x2 mm Thin

■ HBM ESD protection level > 2.4 kV typical (Note 3)

■ RoHS Compliant

■ Free from halogenated compounds and antimony oxides

Applications

■ Battery protection

■ Battery management

■ Load switch