Dual P-Channel PowerTrench MOSFET

General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected i

文件：108.33 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel PowerTrench MOSFET

文件：845.86 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel PowerTrench짰 MOSFET

文件：863.56 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel PowerTrench짰 MOSFET -20 V, -3 A, 120 m廓

General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected i

文件：294.76 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel PowerTrench MOSFET

文件：845.86 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel PowerTrench짰 MOSFET

文件：863.56 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

-20V双P沟道PowerTrench® MOSFET

该器件专门设计为单封装解决方案，适合手机和其他超便携应用的电池充电开关。 该器件具有两个带低导通电阻的独立P沟道MOSFET，以最大限度地降低导通损耗。 当连接为典型共源配置时，可以实现双向电流流动。MicroFET 2x2封装虽然体积小巧，却能提供出色的热性能，非常适合线性模式应用。 •-3.0 A, -20V.\n•RDS(ON) = 120 mΩ（VGS = -4.5 V 时）\n• RDS(ON) = 160 mΩ（VGS = -2.5 V 时）\n• RDS(ON) = 240 mΩ（VGS = -1.8 V时）\n• • 薄型 – 最大 0.8 mm – 采用新的 MicroFET 2x2 mm 封装\n•符合 RoHS 标准\n•不含任何卤代化合物和锑氧化物;

ONSEMI

安森美半导体