Dual N-Channel PowerTrench짰 MOSFET 30 V, 3.8 A, 68 m廓

General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2

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FAIRCHILD

仙童半导体

双 N 沟道，PowerTrench® MOSFET，30V，3.8A，68mΩ

该器件是专为满足蜂窝手机和其他超便携应用中的双开关要求而设计的单封装解决方案。 该器件具有两个带低通态电阻的独立N沟道MOSFET，可最大限度地降低传导损耗。 MicroFET 2x2封装虽然体积小巧，却能提供出色的热性能，非常适合线性模式应用。 •VGS = 4.5 V且ID = 3.8 A时，最大rDS(on) = 68 mΩ \n•VGS = 2.5 V且ID = 3.4 A时，最大rDS(on) = 88 mΩ \n•在VGS = 1.8 V且ID = 2.9 A时，最大值rDS(on) = 123 mΩ \n•薄型 – 最厚0.8mm – 采用新的MicroFET 2x2 mm封装\n•符合RoHS标准;

ONSEMI

安森美半导体

LEADLESS GLASS ZENER DIODES

DESCRIPTION This surface mountable zener diode seriesis similar to the 1N3016 thru 1N3051 JEDEC registrationin the DO-13 package except that it meets the surface mount DO-213AB outline. It is an ideal selection for applications of high density and low parasitic requirements. Due to its glass he

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MICROSEMI

美高森美

Infrared Emitting Diode PN Gallium Arsenide

Description: The NTE3028 is designed for applications requiring high power output, low drive power, and very fast response time. This device is used in industrial processing and control, light modulators, shaft or position encoders, punched card readers, optical switching, and logic circuits. I

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NTE

SILICON ABRUPT VARACTOR DIODE

DESCRIPTION: The ASI S3028is a Designed for use in general purpose filter and oscillator applications. FEATURES: • Blue Cathode dot •Hermetic sealed Package

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ASI