FDM21-05QC

Q-Class Power MOSFETs

Q-ClassPowerMOSFETs ChopperTopologiesinISOPLUSi4-PACTM Features •Q-ClassPowerMOSFETtechnology -lowRDSon -lowgatechargeforhighfrequency operation -unclampedinductiveswitching(UIS) capability -dv/dtruggedness •HiPerDynTMFRED -consistin

FDM2452NZ

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisdualN-ChannelMOSFEThasbeendesignedusingFairchildSemiconductor’sadvancedPowerTrenchprocesstooptimizetheRDS(ON)@VGS=2.5vonspecialMicroFETleadframewithallthedrainsononesideofthepackage. Features •8.1A,30VRDS(ON)=21mΩ@VGS=4.5V

FDM3300NZ

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisdualN-ChannelMOSFEThasbeendesignedusingFairchildSemiconductorsadvancedPowerTrench®processtooptimizetherDS(on)@VGS=2.5VonspecialMLPleadframewithallthedrainsononesideofthepackage. Features ■MaxrDS(on)=23mΩatVGS=4.5V,ID=10A ■M

FDM3622

N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ■MaxrDS(on)=60mΩatVGS=10

FDM3622

N-Channel PowerTrench짰 MOSFET 100V, 4.4A, 60m廓

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ■MaxrDS(on)=60mΩatVGS=10

FDM3622_07

N-Channel PowerTrench짰 MOSFET 100V, 4.4A, 60m廓

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ■MaxrDS(on)=60mΩatVGS=10

FDM606P

P-Channel 1.8V Logic Level Power Trench MOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsuitedforportable

FDM6296

Single N-Channel, Logic-Level, PowerTrench MOSFET

GeneralDescription ThissingleN-channelMOSFETinthethermallyefficientMicroFETpackagehasbeenspecificallydesignedtoperformwellinPointofLoadconverters.ProvidinganoptimizedbalancebetweenrDS(on)andgatechargethisdevicecanbeeffectivelyusedasa“highside”controlswit

FDM7578

20 V, 6 A Synchronous Step-Down

GENERALDESCRIPTION TheADP2381isacurrentmodecontrol,synchronous,stepdown,dc-to-dcregulator.Itintegratesa44mΩpowerMOSFETandalow-sidedrivertoprovideahighefficiencysolution.TheADP2381runsfromaninputvoltageof4.5Vto20Vandcandeliver6Aofoutputcurrent.T

FDMA1023PZ

Dual P-Channel PowerTrench MOSFET -20V, -3.7A, 72mohm

GeneralDescription Thisdeviceisdesignedspecificallyasasinglepackagesolutionforthebatterychargeswitchincellularhandsetandotherultra-portableapplications.ItfeaturestwoindependentP-ChannelMOSFETswithlowon-stateresistanceforminimumconductionlosses.Whenconnectedi