Dual N-Channel PowerTrench짰 MOSFET 20 V, 5.0 A, 54 m廓

General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Features ■ Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A ■ Max rDS(on) = 29 mΩ at VGS = 2.5 V,

文件：315.37 Kbytes 页数：7 Pages

Fairchild

仙童半导体

丝印：024；Package：MicroFET；Dual N-Channel PowerTrench짰 MOSFET

文件：622.28 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

双 N 沟道，PowerTrench® MOSFET，20V，5.0A，54mΩ

该器件是专为满足蜂窝手机和其他超便携应用中的双开关要求而设计的单封装解决方案。 该器件具有两个带低通态电阻的独立N沟道MOSFET，可最大限度地降低传导损耗。 MicroFET 2x2封装虽然体积小巧，却能提供出色的热性能，非常适合线性模式应用。 •VGS = 4.5 V，ID = 5.0 A时，最大rDS(on) = 54 mΩ\n•最大rDS(on) = 66 mΩ（VGS = 2.5 V，ID = 4.2 A）\n•VGS = 1.8 V，ID = 2.3 A时，最大rDS(on) = 82 mΩ\n•VGS = 1.5 V，ID = 2.0 A时，最大rDS(on) = 114 mΩ\n•HBM ESD保护等级 = 1.6 kV（注3）\n•薄型 - 最厚0.8mm - 采用新的MicroFET 2x2 mm封装\n•符合RoHS标准\n•无任何卤代化合物和锑氧化物;

ONSEMI

安森美半导体

Dual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 m

General Description This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. Features ■ Ma

文件：269.29 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Dual N-Channel PowerTrench짰 MOSFET

文件：269.29 Kbytes 页数：7 Pages

Fairchild

仙童半导体

SILICON SURGE SUPPRESSOR DIODES

[LEDEX]

文件：390.72 Kbytes 页数：10 Pages

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