Dual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 m

General Description This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. Features ■ Ma

文件：269.29 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Dual N-Channel PowerTrench짰 MOSFET

文件：269.29 Kbytes 页数：7 Pages

Fairchild

仙童半导体

双 N 沟道，Power Trench® MOSFET，20V，3.8A，66mΩ

该器件专门设计为单封装解决方案，符合蜂窝手机和其他超便携应用的双通道开关要求。 该器件具有两个带低通态电阻的独立N沟道MOSFET，可最大限度地降低传导损耗。 MicroFET 1.6x1.6薄型封装虽然体积小巧，却能提供出色的热性能，非常适合开关和线性模式应用。 •VGS = 4.5 V，ID = 3.4 A时，Max rDS(on) = 66 mΩ\n•VGS = 2.5 V，ID = 2.9 A时，Max rDS(on) = 86 mΩ\n•VGS = 1.8 V，ID = 2.5 A时，Max rDS(on) = 113 mΩ\n•VGS = 1.5 V，ID = 2.1 A时，Max rDS(on) = 160 mΩ\n•薄型： 0.55 mm最大值，新的MicroFET 1.6x1.6薄型封装\n•不含有卤化合物和氧化锑\n•HBM ESD保护等级>1,600V（注3）<强>\n•符合RoHS标准;

ONSEMI

安森美半导体

SILICON SURGE SUPPRESSOR DIODES

[LEDEX]

文件：390.72 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON SURGE SUPPRESSOR DIODES

[LEDEX]

文件：390.72 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ELECTRICAL & MECHANICAL SPECIFICATION

FEATURES Gray coded, standard and complimentary versions PCB Terminals + extra stabilising terminals Standard 22.5° indexing 4-Bit Standard 45° indexing 3-Bit Adjustable stops to restrict number of positions Standard silver contacts, gold flashed Moulded 27.5mm diameter Spindl

文件：707.54 Kbytes 页数：2 Pages

LORLIN