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型号	下载订购	功能描述	制造商上传企业	LOGO
FDG6301N_F085	文件：351.8 Kbytes Page：5 Pages	Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi 文件：351.8 Kbytes 页数：5 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FDG6301N-F085	文件：640.17 Kbytes Page：6 Pages	丝印：FDG6301N；Package：SC-88；Dual N-Channel, Digital FET Features • 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7 V. • Very Low Level Gate Drive Requirements allowing Directop− Eration in 3 V Circuits (VGS(th) 6 kV Human Body Model) • Compact Indu 文件：640.17 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
FDG6302	文件：302.73 Kbytes Page：8 Pages	Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi 文件：302.73 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FDG6302P	文件：302.73 Kbytes Page：8 Pages	Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi 文件：302.73 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FDG6303	文件：226.92 Kbytes Page：8 Pages	Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi 文件：226.92 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FDG6303N	文件：226.92 Kbytes Page：8 Pages	Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi 文件：226.92 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FDG6304	文件：227.13 Kbytes Page：8 Pages	Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi 文件：227.13 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FDG6304P	文件：227.13 Kbytes Page：8 Pages	Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi 文件：227.13 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FDG6306P	文件：61.66 Kbytes Page：5 Pages	P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features –0.6 A, –20 V. Rds(on)= 420 mΩ@ VGS= –4.5 V 文件：61.66 Kbytes 页数：5 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FDG6308	文件：85.99 Kbytes Page：5 Pages	P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.6 A, –20 V. RDS(ON)= 0.40 Ω@ VGS= –4.5 V RDS(ON)= 0.55 Ω@ VGS= –2.5 文件：85.99 Kbytes 页数：5 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

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晶体管资料

型号：
FDG002
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
性质：
微波（MW）_静噪放大（LN）_宽频带放大（A）
封装形式：
直插封装
极限工作电压：
30V
最大电流允许值：
0.7A
最大工作频率：
<1MHZ或未知
引脚数：
4
可代换的型号：
最大耗散功率：
0.7W
放大倍数：
图片代号：
D-51
vtest：
30
htest：
999900
atest：
0.7
wtest：
0.7

技术参数

Pb-free：
Pb
Halide free：
H
Status：
Active
Channel Polarity：
N-Channel
Configuration：
Dual
V(BR)DSS Min (V)：
20
VGS Max (V)：
8
VGS(th) Max (V)：
1
ID Max (A)：
1.2
PD Max (W)：
0.36
RDS(on) Max @ VGS = 2.5 V(mΩ)：
Q1=Q2=215
RDS(on) Max @ VGS = 4.5 V(mΩ)：
Q1=Q2=175
Qg Typ @ VGS = 10 V (nC)：
1.8
Ciss Typ (pF)：
115
Package Type：
SC-88-6/SC-70-6/SOT-363-6

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市正纳电子有限公司	FDG8842CZ	NA	23+	NA	26094	10年以上分销经验原装进口正品,做服务型企业	询价
深圳市华高宇电子有限公司	FDG6320C	FSC			3976	只做原装正品,卖元器件不赚钱交个朋友	询价
亚泰电子科技有限公司	FDG6332C	ONSEMI	22+	SMD	6000		询价
深圳市中联芯电子有限公司	FDG6335N	ON/安森美	24+	SC70-6	12000	只做原装合作共赢长期订货	询价
深圳市荣泽信电子科技有限公司	FDG6316P	仙童	23+	SOT-363	30000	全新原装现货热卖	询价
深圳市恒创达实业有限公司	FDG6318P	FAIRCHILD	17+	SOT-363	6200	100%原装正品现货	询价
深圳市得捷芯城科技有限公司	FDG6316P	ONSEMI	25+	SC-88	18798	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市欧亚佳电子有限公司	FDG6303N	ON	20+	SC70-6	11520	特价全新原装公司现货	询价
上海金庆电子技术有限公司	FDG901D_NL	FAIRCHILD	08+	SMB	3015		询价
瀚佳科技(深圳)有限公司	FDG312P	FSC	24+	SOIC	37200	原装现货/放心购买	询价

更多FDG供应商更新时间2026-1-25 10:46:00

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