Axial Vitreous Leaded Wirewound Resistors with CECC Approval

文件：134.6 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：FDG6301N；Package：SC-88；Dual N-Channel, Digital FET

Features • 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7 V. • Very Low Level Gate Drive Requirements allowing Directop− Eration in 3 V Circuits (VGS(th) 6 kV Human Body Model) • Compact Indu

文件：640.17 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel 2.5V Specified PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable e

文件：89.53 Kbytes 页数：5 Pages

Fairchild

仙童半导体

P-Channel 2.5V Specified PowerTrench??MOSFET

General Description This P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable e

文件：206.75 Kbytes 页数：8 Pages

Fairchild

仙童半导体

P-Channel 20V (D-S) MOSFET

Application Interfacing Switching » Portable equipment and battery Load Switch

文件：1.94787 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

Digital FET, N-Channel

General Description This N-Channel enhancement mode field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage

文件：713.24 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Digital FET, P-Channel

General Description This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed

文件：84.38 Kbytes 页数：5 Pages

Fairchild

仙童半导体

P-Channel Logic Level PowerTrench MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and batte

文件：70.79 Kbytes 页数：5 Pages

Fairchild

仙童半导体

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –1.5 A, –20 V. RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 180 mΩ @ VGS =

文件：69.5 Kbytes 页数：5 Pages

Fairchild

仙童半导体

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –1.5 A, –20 V. RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 180 mΩ @ VGS =

文件：69.5 Kbytes 页数：5 Pages

Fairchild

仙童半导体