FDG

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

FDG311N

N-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsuitedforportablee

FDG312P

P-Channel 2.5V Specified PowerTrench??MOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsuitedforportablee

FDG313N

Digital FET, N-Channel

GeneralDescription ThisN-ChannelenhancementmodefieldeffecttransistorisproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeciallyforlowvoltage

FDG314P

Digital FET, P-Channel

GeneralDescription ThisP-ChannelenhancementmodefieldeffecttransistorisproducedusingFairchildSemiconductor’sproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessistailoredtominimizeonstateresistanceatlowgatedriveconditions.Thisdeviceisdesigned

FDG316P

P-Channel Logic Level PowerTrench MOSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandbatte

FDG326

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–1.5A,–20V.RDS(ON)=140mΩ@VGS=–4.5V RDS(ON)=180mΩ@VGS=

FDG326P

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–1.5A,–20V.RDS(ON)=140mΩ@VGS=–4.5V RDS(ON)=180mΩ@VGS=

FDG327N

20V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andgatec

FDG327NZ

20V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andgatec