| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.6 A, –20 V. RDS(ON)= 0.40 Ω@ VGS= –4.5 V RDS(ON)= 0.55 Ω@ VGS= –2.5 文件：85.99 Kbytes 页数：5 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V RDS(ON) = 360 mΩ @ VGS = –2.5 V RDS(ON) = 650 mΩ @ VGS = 文件：149.58 Kbytes 页数：5 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V RDS(ON) = 360 mΩ @ VGS = –2.5 V RDS(ON) = 650 mΩ @ VGS = 文件：149.58 Kbytes 页数：5 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
丝印：.16；Package：SC70-6；P-Channel 1.8V Specified PowerTrench ®MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V 文件：252.88 Kbytes 页数：7 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Dual 20v N-Channel PowerTrench MOSFET General Description This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and g 文件：138.48 Kbytes 页数：5 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a repl 文件：123.67 Kbytes 页数：5 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
Dual P-Channel Enhancement Mode MOSFET Application Battery protection » Load switch Power management « Power Supply Converter Circuits 文件：2.37476 Mbytes 页数：4 Pages | TECHPUBLIC 台舟电子 | TECHPUBLIC | ||
Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designe 文件：196.27 Kbytes 页数：12 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
20V N-Channel P-Channel Enhancement Mode MOSFET | Application © Notebook © Load Switch © Networking © Hand-held Instruments 文件：1.61918 Mbytes 页数：4 Pages | TECHPUBLIC 台舟电子 | TECHPUBLIC | ||
Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designe 文件：196.89 Kbytes 页数：12 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
- 性质：
微波 （MW）_静噪放大 （LN）_宽频带放大 （A）
- 封装形式：
直插封装
- 极限工作电压：
30V
- 最大电流允许值：
0.7A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
4
- 可代换的型号：
- 最大耗散功率：
0.7W
- 放大倍数：
- 图片代号：
D-51
- vtest：
30
- htest：
999900
- atest：
0.7
- wtest：
0.7
技术参数
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Dual
- V(BR)DSS Min (V)：
20
- VGS Max (V)：
8
- VGS(th) Max (V)：
1
- ID Max (A)：
1.2
- PD Max (W)：
0.36
- RDS(on) Max @ VGS = 2.5 V(mΩ)：
Q1=Q2=215
- RDS(on) Max @ VGS = 4.5 V(mΩ)：
Q1=Q2=175
- Qg Typ @ VGS = 10 V (nC)：
1.8
- Ciss Typ (pF)：
115
- Package Type：
SC-88-6/SC-70-6/SOT-363-6
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
25+23+ |
SC70-6 |
20603 |
绝对原装正品全新进口深圳现货 |
询价 | ||
原厂 |
25+ |
IC |
1 |
普通 |
询价 | ||
FSC |
2022+ |
7600 |
原厂原装,假一罚十 |
询价 | |||
ON/安森美 |
ROHS .original |
SC-70-6 |
600 |
电子元器件供应原装现货. 优质独立分销。原厂核心渠道 |
询价 | ||
FAIRCHILD |
23+ |
SC70-6 |
1284 |
正品原装货价格低 |
询价 | ||
FAIRCHILD |
17+ |
SOT-363 |
6200 |
100%原装正品现货 |
询价 | ||
FSC |
2018+ |
SOP/DIPQFP |
2253 |
原装假一赔十 |
询价 | ||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
询价 | ||
FSC |
24+ |
SOIC |
37200 |
原装现货/放心购买 |
询价 | ||
ON/安森美 |
23+ |
SC70-6 |
50000 |
原装正品 支持实单 |
询价 |
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