P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V RDS(ON) = 360 mΩ @ VGS = –2.5 V RDS(ON) = 650 mΩ @ VGS =

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Fairchild

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丝印：.16；Package：SC70-6；P-Channel 1.8V Specified PowerTrench ®MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V

文件：252.88 Kbytes 页数：7 Pages

ONSEMI

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文件：1.67492 Mbytes 页数：7 Pages

VBSEMI

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P-Channel 1.8V Specified PowerTrench MOSFET

XW

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