FDG328P

P-Channel 2.5V Specified PowerTrench MOSFET

Description ThisP-Channel2.5VspecifiedMOSFETisproducedinaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimized forpowermanagementapplicationsforawiderangeofgatedrivevoltages(2.5V–12V). Features •–1.5A,–20V.Rds(on)=0.1

FDG329N

20V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andgatec

FDG330P

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–2A,–12V.RDS(ON)=110mΩ@VGS=–4.5VRDS(ON)=150mΩ@VGS=–2.5VRDS(ON)=215mΩ@VGS=–

FDG6301N

Marking：01；Package：SOT-363；Dual N-Channel, Digital FET

GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci

FDG6301N

Dual N-Channel MOSFET

■Features ●VDS(V)=25V ●ID=220mA(VGS=4.5V) ●RDS(ON)6kVHumanBodyModel).

FDG6301N_F085

Dual N-Channel, Digital FET

GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci

FDG6301N-F085

Marking：FDG6301N；Package：SC-88；Dual N-Channel, Digital FET

Features •25V,0.22AContinuous,0.65APeak •RDS(ON)=4Ω@VGS=4.5V, •RDS(ON)=5Ω@VGS=2.7V. •VeryLowLevelGateDriveRequirementsallowingDirectop− Erationin3VCircuits(VGS(th)6kVHumanBodyModel) •CompactIndu

FDG6302

Dual P-Channel, Digital FET

GeneralDescription ThesedualP-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci

FDG6302P

Dual P-Channel, Digital FET

GeneralDescription ThesedualP-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci

FDG6303

Dual N-Channel, Digital FET

GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci