20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate c

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FAIRCHILD

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20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate c

文件：235.39 Kbytes 页数：5 Pages

FAIRCHILD

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P-Channel 2.5V Specified PowerTrench MOSFET

Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V). Features •–1.5 A, –20 V. Rds(on)= 0.1

文件：76.76 Kbytes 页数：5 Pages

FAIRCHILD

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P-Channel 20V (D-S) MOSFET

Application » Interfacing Switching » Portable equipment and battery » Load Switch

文件：1.95123 Mbytes 页数：4 Pages

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20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate c

文件：79.84 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –2 A, –12 V. RDS(ON) = 110 mΩ @ VGS = –4.5 V RDS(ON) = 150 mΩ @ VGS = –2.5 V RDS(ON) = 215 mΩ @ VGS = –

文件：150.12 Kbytes 页数：5 Pages

FAIRCHILD

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P-Channel 20V (D-S) MOSFET

Application » Interfacing Switching Portable equipment and battery © Load Switch

文件：1.95147 Mbytes 页数：4 Pages

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P-Channel 20V (D-S) MOSFET

Application Interfacing Switching » Portable equipment and battery Load Switch

文件：1.95245 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：01；Package：SOT-363；Dual N-Channel, Digital FET

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：226.61 Kbytes 页数：8 Pages

FAIRCHILD

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Dual N-Channel MOSFET

■ Features ● VDS (V) = 25V ● ID = 220m A (VGS = 4.5V) ● RDS(ON) 6kV Human Body Model).

文件：1.08153 Mbytes 页数：4 Pages

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