20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate c

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FAIRCHILD

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20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate c

文件：235.39 Kbytes 页数：5 Pages

FAIRCHILD

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20V N-Channel PowerTrenchO MOSFET

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FAIRCHILD

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20V N-Channel PowerTrenchO MOSFET

文件：497.41 Kbytes 页数：5 Pages

FAIRCHILD

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N 沟道，PowerTrench® MOSFET，20V，1.5 A，90 mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 它专为小型开关调节器而优化，可在小型封装中提供极低的RDS(ON)和栅极电荷(QG)。 •1.5 A，20 V\n•RDS(on) = 90 mΩ@ VGS = 4.5 V\n•RDS(on) = 100 mΩ @ VGS = -2.5V\n•RDS(on) = 140 mΩ @ VGS = -1.8V\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力。;

ONSEMI

安森美半导体

N 沟道，PowerTrench® MOSFET，20 V，1.5 A，90 mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 它专为小型开关调节器而优化，可在小型封装中提供极低的RDS(ON)和栅极电荷(QG)。 •1.5A, 20V\n•RDS(ON) = 90 mΩ @ VGS = 4.5V\n•RDS(ON) = 100 mΩ @ VGS = 2.5V\n•RDS(ON) = 140 mΩ @ VGS = 1.8V\n•快速开关速度\n•低栅极电荷 \n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力;

ONSEMI

安森美半导体

N-Channel MOSFET

XW

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