P-Channel Logic Level PowerTrench MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and batte

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Fairchild

仙童半导体

P 沟道，逻辑电平，PowerTrench® MOSFET，-30 V，-1.6 A，190 mΩ

此P沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 •-1.6 A，-30 A V。 RDS(on) = 0.19 Ω @ VGS = -10 V。 RDS(on) = 0.30 Ω @ VGS = -4.5 V。\n• RDS(on) = 0.19 Ω @ VGS = -10 V\n• RDS(on) = 0.30 Ω @ VGS = -4.5 V.\n•低栅极电荷（3.5nC，典型值）。\n•高性能沟道技术可实现极低的RDS(ON)。\n•紧凑的工业标准SC70-6表面贴装封装。;

ONSEMI

安森美半导体

Customer Specification

Construction 1) Tubing Type Heat Shrinkable Tubing 2) Tubing Material Irradiated PVDF (Kynar) 3) Minimum Supplied ID(In) 0.187 4) Maximum Recovered ID (In) 0.093 5) Nominal Recovered Wall Thickness(In) 0.010 6) Color(s) CLEAR Applicable Specifications 1) UL Standard 224 150°C VW-1 2) O

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ALPHAWIRE

Disc Ceramic Capacitors

-General Purpose -Ideal For Use in Non-critical Coupling, Bypass and Filter Applications -Conformally Coated -Radial Leads

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MALLORY

Chip Monolithic Ceramic Capacitors

Chip Monolithic Ceramic Capacitors For General Purpose GRM Series ■ Features 1. Higher resistance of solder-leaching due to the Ni-barriered termination, applicable for reflow-soldering, and flow-soldering (GRM18/21/31 type only). 2. The GRM series is a lead free product. 3. Small

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MuRata

村田