FDG312P

P-Channel 2.5V Specified PowerTrench??MOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsuitedforportablee

FDG312P

P 沟道，PowerTrench® MOSFET，2.5V 指定，-1.2 A，180 mΩ; •-1.2 A，-20 V。 RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V。\n• RDS(on) = 0.18 Ω @ VGS = -4.5 V\n• RDS(on) = 0.25 Ω @ VGS = -2.5 V\n•低栅极电荷（3.3 nC，典型值）。\n•高性能沟道技术可实现极低的RDS(ON)。\n•紧凑的工业标准SC70-6表面贴装封装。\n;

此P沟道MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大程度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件非常适合便携式电子产品应用。

FGT312

SelectionGuide

SANKENIGBT FGT313,FGT312,FGT412,FGT612,FGM622S,FGM603,FGM623S,MGD623N,MGD623S

FMMT312

2-PACKMOSFETMODULE

FMT-312

12V1Watt27MHzTransmitter

FMT-312E

12V1Watt27MHzTransmitter

FOX312BE

3.0VLOWPROFILESMDVCTCXO

FOX312BE

3.0V,LOWPROFILE,SMDVCTCXO

FOX312BE

3.0V,LOWPROFILE,SMDVCTCXO

FS312

FlashersandTowerLightingControls

Description TheFS300Seriesofsolid-stateflasherswerespecifically designedtooperatelamploads.Theirtwo-terminalseries connectionfeaturemakesinstallationeasy.Thehighimmunity tolinenoiseandtransientsmakestheFS300Seriesidealfor movingvehicleapplications.Allsolid-s