isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=100A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.2mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：1.06654 Mbytes 页数：4 Pages

BYCHIP

百域芯

Primary Switch for 12V Systems

文件：400.25 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

TO-252

FAIRCHILD

仙童半导体

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TO-252

ON

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