isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：1.05009 Mbytes 页数：4 Pages

BYCHIP

百域芯

丝印：FDD86580；Package：D-PAK；N-Channel PowerTrench짰 MOSFET

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ONSEMI

安森美半导体

MOSFET 60/20V 1000A NCnl PowerTrench MOSFET

ONSEMI

安森美半导体