isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=90A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =4.4mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：353.81 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：1.04329 Mbytes 页数：4 Pages

Bychip

百域芯

N-Channel Logic Level PowerTrench MOSFET

文件：608.41 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel Logic Level PowerTrench MOSFET

文件：608.41 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel Logic Level PowerTrench MOSFET

ONSEMI

安森美半导体