isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=90A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.2mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：353.63 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench짰 MOSFET

Features ■ Typ RDS(on) = 2.3mΩ at VGS = 10V, ID = 80A ■ Typ Qg(tot) = 42nC at VGS = 10V, ID = 80A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ Powertrain Management ■ Solenoid and Motor Drivers ■ Electronic Steering ■ Integrated St

文件：400.71 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench ® MOSFET

Features „ Typ RDS(on) = 2.3mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 42nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated

文件：452.28 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=90A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =4.4mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：353.81 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：1.04329 Mbytes 页数：4 Pages

BYCHIP

百域芯

N-Channel Logic Level PowerTrench MOSFET

文件：608.41 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel Logic Level PowerTrench MOSFET

文件：608.41 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel Logic Level PowerTrench MOSFET

ONSEMI

安森美半导体