isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=25A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：1.09088 Mbytes 页数：4 Pages

Bychip

百域芯

N 沟道，PowerTrench® MOSFET，60 V，25 A，15 mΩ

N-Channel PowerTrench® MOSFET 60 V, 25 A, 15 mΩ • 典型值 RDS(on) = 12.3 mΩ（VGS = 10 V、ID = 25 A）\n• 典型值 Qg(tot) = 12.6 nC（VGS = 10 V、ID = 25 A）\n• UIS 能力\n• 符合RoHS标准\n•符合 AEC Q101 标准;

ONSEMI

安森美半导体

BERGSTIK II HEADER D/R 100/2.52cc STRAIGHT

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FCI-CONNECTOR