BERGSTIK II HEADER D/R 100/2.52cc STRAIGHT

文件：664.8 Kbytes 页数：8 Pages

FCI-CONNECTOR

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：1.09088 Mbytes 页数：4 Pages

Bychip

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=25A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：353.23 Kbytes 页数：2 Pages

ISC

无锡固电

TRIDENT
BGA

Trident

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