N-Channel MOSFET 530V, 4A, 1.5廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：250.61 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4A@ TC=25℃ ·Drain Source Voltage -VDSS=530V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.5Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.08 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 530V, 4A, 1.5廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：250.61 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-Channel MOSFET 530V, 4A, 1.5廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：250.61 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

MOSFET N-CH 530V 4A DPAK

ONSEMI

安森美半导体