N-Channel UniFET II MOSFET 600 V, 4.0 A, 2 Ohm

文件：334.68 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N-Channel UniFET II MOSFET 600 V, 4.0 A, 2 Ohm

文件：334.68 Kbytes 页数：8 Pages

Fairchild

仙童半导体

功率 MOSFET，N 沟道，UniFETTM II，600V，4A，2Ω，DPAK

UniFETTM II MOSFET 是飞兆半导体的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术。该先进MOSFET系列产品在平面 MOSFET 产品中具有最小的通态电阻，还可提供卓越的开关性能和更高的雪崩能量强度。此外，内部的栅源 ESD 二极管使 UniFET II MOSFET 产品可承受超过 2kV 的 HBM 冲击应力。该器件系列适用于开关电源转换器应用，如功率因数校正(PFC)、平板显示器(FPD)电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 1.65Ω （典型值）@ VGS = 10V, ID = 2.0A栅极电荷低（典型值：10nC)\n•低 Crss（典型值5pF)\n•100% 经过雪崩击穿测试\n•提高了 dv/dt 性能\n•改进了 ESD 防护能力\n•符合 RoHS 标准\n•RoHS compliant;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2 Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.77 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 600V, 4.5A, 2.0廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：344.75 Kbytes 页数：10 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：323.6 Kbytes 页数：2 Pages

ISC

无锡固电