丝印：D2097；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC/IB= 4A / 0.1A) Excellent Dc current gain characteristics

文件：1.38154 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D2097；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC/IB= 4A / 0.1A) Excellent Dc current gain characteristics

文件：1.38154 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

2M-bit (256K횞8) Serial Flash Memory

文件：163.84 Kbytes 页数：21 Pages

SANYO

三洋

TRANSISTOR (NPN)

TRANSISTOR (NPN) Low VCE(sat) Transistor(Strobe flash) FEATURES ● Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC/IB= 4A / 0.1A) ● Excellent Dc current gain characteristics

文件：178.04 Kbytes 页数：2 Pages

FS

IGBT

DESCRIPTION · Short Circuit Capability · Anti-Parallel Ultra Fast Diode · High Current Handling Capability APPLICATIONS · Power Inverters · UPS · Motor Drives · Welding Machines · SMPS · High Frequency Power Inverters

文件：260.959 Kbytes 页数：2 Pages

ISC

无锡固电