2SD2162

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPNSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING The2SD2162isaDarlingtonpowertransistorthatcandirectlydrivefromtheICoutput.ThistransistorisidealformotordriversandsolenoiddriversinsuchasOAandFAequipm

2SD2162

SILICON POWER TRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING The2SD2162isaDarlingtonpowertransistorthatcandirectlydrivefromtheICoutput.ThistransistorisidealformotordriversandsolenoiddriversinsuchasOAandFA

2SD2162

isc Silicon NPN Darlington Power Transistor

DESCRIPTION •HighhFEduetoDarlingtonconnection :HFE≥2,000@(VCE=2.0V,IC=3.0A) •LowCollectorSaturationVoltage- :VCE(sat)≤1.5V@(IC=3A,IB=3mA) •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforlow

2SD2162

Bipolar Power Transistors; • High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 3.0 A)\n• Full mold package that does not require an insulating board or insulation bushing\n;

Support is limited to customers who have already adopted these products.\n\nThe 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.

2SD2162_15

SILICON POWER TRANSISTOR