NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipm

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NEC

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SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA

文件：235.71 Kbytes 页数：8 Pages

RENESAS

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isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High hFE due to Darlington connection : HFE ≥ 2,000 @(VCE = 2.0 V, IC = 3.0 A) • Low Collector Saturation Voltage- : VCE(sat) ≤1.5V @ (IC=3A, IB= 3mA) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low

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ISC

无锡固电

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insul • High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 3.0 A)\n• Full mold package that does not require an insulating board or insulation bushing;

Renesas

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SILICON POWER TRANSISTOR

文件：235.71 Kbytes 页数：8 Pages

RENESAS

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