NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipm

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SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA eq

文件：281.82 Kbytes 页数：8 Pages

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isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 2A, IB= 2mA) APPLICATIONS • Designed for low-frequency power amplifiers and low-spee

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isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High hFE due to Darlington connection : HFE ≥ 2,000 @(VCE = 2.0 V, IC = 3.0 A) • Low Collector Saturation Voltage- : VCE(sat) ≤1.5V @ (IC=3A, IB= 3mA) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low

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ISC

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SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA

文件：235.71 Kbytes 页数：8 Pages

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NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipm

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NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct driving from the IC output of devices such a

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DARLINGTON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct driving from the IC output of devices su

文件：250.57 Kbytes 页数：6 Pages

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isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= 10A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Be ideal for direct driving from the IC output of devi

文件：265.84 Kbytes 页数：2 Pages

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SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of

文件：280.45 Kbytes 页数：8 Pages

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