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2SD2120

General Driver Applications?????????

General Driver Applications * Darlington connection ( Contains bias resistance, damper diode) * High DC current gain * Less dependence of DC current gain on temperature

文件:71.32 Kbytes 页数:3 Pages

SANYO

三洋

2SD2121

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S)

文件:31.02 Kbytes 页数:5 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SD2121

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S)

文件:145.01 Kbytes 页数:6 Pages

RENESAS

瑞萨

2SD2121

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件:276.23 Kbytes 页数:2 Pages

ISC

无锡固电

2SD2121

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件:295.29 Kbytes 页数:2 Pages

ISC

无锡固电

2SD2121-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件:295.29 Kbytes 页数:2 Pages

ISC

无锡固电

2SD2121-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件:276.23 Kbytes 页数:2 Pages

ISC

无锡固电

2SD2121L

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S)

文件:145.01 Kbytes 页数:6 Pages

RENESAS

瑞萨

2SD2121L

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S)

文件:31.02 Kbytes 页数:5 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SD2121S

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S)

文件:31.02 Kbytes 页数:5 Pages

HITACHIHitachi Semiconductor

日立日立公司

详细参数

  • 型号:

    2SD212

  • 制造商:

    RENESAS

  • 制造商全称:

    Renesas Technology Corp

  • 功能描述:

    Silicon NPN Epitaxial

供应商型号品牌批号封装库存备注价格
NK/南科功率
2025+
TO-252
986966
国产
询价
HITACHI
24+
TO-252
36800
询价
HITACHI
25+
SOT-252
2987
只售原装自家现货!诚信经营!欢迎来电
询价
HITACHI
2023+环保现货
TO-252
18000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
HITACHI
2023+
TO-252
50000
原装现货
询价
HITACHI
24+
TO-252
5000
只做原装正品现货 欢迎来电查询15919825718
询价
UTG
23+
251-252
988888
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
HITACHI
23+
SOT-252
50000
全新原装正品现货,支持订货
询价
HITACHI
01+
SOT-252
1894
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
HITACHI
22+
SOT-252
20000
公司只有原装 品质保证
询价
更多2SD212供应商 更新时间2026-4-19 14:01:00