isc Silicon NPN Power Transistor

文件：263.67 Kbytes 页数：2 Pages

ISC

无锡固电

NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications ● High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) ● Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA) ● Zener diode included between collector and base.

文件：218.48 Kbytes 页数：4 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) • Zener diode included between collector and base. • Unclamped inductive load energy: E =

文件：228.5 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For low-frequency power amplification driver ■ Features • Low collector-emitter saturation voltage VCE(sat)

文件：96.03 Kbytes 页数：4 Pages

PANASONIC

松下

Silicon PNP epitaxial planar type

For low-frequency driver/high power amplification Complementary to 2SD2134 ■Features •Excellent current ICcharacteristics of forward current transfer ratio hFE vs. collector •High transition frequency fT •Allowing automatic insertion with radial taping

文件：81.86 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon PNP epitaxial planar type

For low-frequency power amplification Complementary to 2SD2136 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping

文件：82.07 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN triple diffusion planar type

For power amplification Complementary to 2SB1416 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

文件：86.32 Kbytes 页数：3 Pages

PANASONIC

松下

POWER TRANSISTOR

POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * Allowing supply with the radial taping.

文件：114.96 Kbytes 页数：3 Pages

UTC

友顺

NPN Plastic Encapsulated Transistor

FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current

文件：258.62 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：D2136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping

文件：1.30854 Mbytes 页数：4 Pages

DGNJDZ

南晶电子