丝印：D2136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping

文件：1.30854 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D2136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping

文件：1.30854 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Silicon NPN triple diffusion planar type

For power amplification Complementary to 2SB1416 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

文件：86.32 Kbytes 页数：3 Pages

Panasonic

松下