2SD2137

Silicon PNP epitaxial planar type(For power amplification)

SiliconPNPepitaxialplanartype Forpoweramplification Complementaryto2SD2137and2SD2137A ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Allowingautomaticinsertionwithradialtaping

2SD2137

Marking：2SD2137；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES HighForwardCurrentTransferRatiohFEwhichHas SatisfactoryLinearity LowCollectortoEmitterSaturationVoltageVCE(sat) AllowingSupplywiththeRadialTaping

2SD2137

Silicon NPN triple diffusion planar type(For power amplification)

SiliconNPNtriplediffusionplanartype Forpoweramplification,Complementaryto2SB1417and2SB1417A Features 1.HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity 2.LowcollectortoemittersaturationvoltageVCE(sat) 3.Allowingsupplywithther

2SD2137

Plastic-Encapsulated Transistors

2SD2137

TO-220 -3L Plastic-Encapsulate Transistors

2SD2137

TRANSISTOR (NPN)

2SD2137

TRANSISTOR (NPN)

2SD2137A

Silicon PNP epitaxial planar type(For power amplification)

SiliconPNPepitaxialplanartype Forpoweramplification Complementaryto2SD2137and2SD2137A ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Allowingautomaticinsertionwithradialtaping

2SD2137A

Silicon NPN triple diffusion planar type(For power amplification)

SiliconNPNtriplediffusionplanartype Forpoweramplification,Complementaryto2SB1417and2SB1417A Features 1.HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity 2.LowcollectortoemittersaturationvoltageVCE(sat) 3.Allowingsupplywithther

2SD2137A

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–EmitterSustainingVoltage VCEO:80V(Min) ·LowCollectorSaturationVoltage :VCE(sat)=1.2V(Max.)@IC=3A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforhighvoltageandgeneralpurposeapplications