N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 43A, RDS(ON) = 8.4mW @VGS = 10V. RDS(ON) = 13mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件：943.85 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 40A, RDS(ON) = 10.2 mW @VGS = 10V. RDS(ON) = 16 mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：744.59 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 14.6A, RDS(ON) = 65mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：1.01093 Mbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 45A, RDS(ON) = 8.5mW @VGS = 10V. RDS(ON) = 12mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：995.75 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 24A, RDS(ON) = 24mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 30mW @VGS = 4.5V.

文件：957.73 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 26A, RDS(ON) = 20.5mW @VGS = 10V. RDS(ON) = 28mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：964.4 Kbytes 页数：6 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -17A, RDS(ON) = 48mW @VGS = -10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 65mW @VGS = -4.5V.

文件：1.0221 Mbytes 页数：6 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -13.5A, RDS(ON) = 86mW @VGS = -10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 125mW @VGS = -4.5V.

文件：941.71 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 7.4mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 12mW @VGS = 4.5V. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件：849.62 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 439A, RDS (ON) = 0.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件：1.16428 Mbytes 页数：5 Pages

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