P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -17A, RDS(ON) = 48mW @VGS = -10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 65mW @VGS = -4.5V.

文件：1.0221 Mbytes 页数：6 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

Ultrahigh-Speed Switching Applications

文件：39.46 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor (-)50V, (-)1A, Low VCE(sat), (PNP)NPN Single CPH3

Bipolar Transistor (–)50V, (–)1A, Low VCE(sat), (PNP)NPN Single CPH3 Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm)

文件：631.31 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description The GTT6405 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. Features *Lower Gate Charge *RoHS Compliant *Small Footprint & Low Profile Package

文件：317.35 Kbytes 页数：4 Pages

GTM

勤益投资控股