丝印：LM；Package：ESC；Zener Diode Silicon Epitaxial Planar

Applications (1) Voltage surge protection Features (1) Small package (2) The typical voltage of VZ is accorded to E24 series.

文件：1.80583 Mbytes 页数：28 Pages

TOSHIBA

东芝

丝印：LN；Package：ESC；Zener Diode Silicon Epitaxial Planar

Applications (1) Voltage surge protection Features (1) Small package (2) The typical voltage of VZ is accorded to E24 series.

文件：1.80583 Mbytes 页数：28 Pages

TOSHIBA

东芝

丝印：LP；Package：ESC；Zener Diode Silicon Epitaxial Planar

Applications (1) Voltage surge protection Features (1) Small package (2) The typical voltage of VZ is accorded to E24 series.

文件：1.80583 Mbytes 页数：28 Pages

TOSHIBA

东芝

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 49A, RDS (ON) = 7.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Pb-free lead plating ; RoHS compliant. Halogen Free. RDS(ON) = 12mW @VGS = 4.5V.

文件：742.07 Kbytes 页数：6 Pages

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华瑞

丝印：LQ；Package：ESC；Zener Diode Silicon Epitaxial Planar

Applications (1) Voltage surge protection Features (1) Small package (2) The typical voltage of VZ is accorded to E24 series.

文件：1.80583 Mbytes 页数：28 Pages

TOSHIBA

东芝

丝印：LR；Package：ESC；Zener Diode Silicon Epitaxial Planar

Applications (1) Voltage surge protection Features (1) Small package (2) The typical voltage of VZ is accorded to E24 series.

文件：1.80583 Mbytes 页数：28 Pages

TOSHIBA

东芝

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 10A, RDS(ON) = 120mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 130mW @VGS = 5V. RDS(ON) = 165mW @VGS = 3V.

文件：1.029839 Mbytes 页数：6 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 40A, RDS(ON) = 10.5mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 17mW @VGS = 4.5V.

文件：878.1 Kbytes 页数：6 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 42A, RDS(ON) = 9.8mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 13mW @VGS = 4.5V.

文件：895.02 Kbytes 页数：6 Pages

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华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 14.8A, RDS(ON) = 53mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件：777.93 Kbytes 页数：6 Pages

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华瑞