P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -61A, RDS(ON) = 9 mW @VGS = -10V. RDS(ON) = 13 mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：592.51 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -62A, RDS(ON) = 8.4 mW @VGS = -10V. RDS(ON) = 13.5 mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：915.49 Kbytes 页数：6 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -53A, RDS(ON) = 9 m W @VGS = -10V. RDS(ON) = 12m W @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：875.3 Kbytes 页数：5 Pages

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. 30V, 40A, RDS(ON) = 11mW @VGS = 10V. -30V, -33A, RDS(ON) = 17mW @VGS = -10V. Surface mount Package. RoHS compliant.

文件：1.03204 Mbytes 页数：7 Pages

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES Super high dense cell design for extremely low RDS(ON). 30V, 56A, RDS(ON) = 6.2mW @VGS = 10V. -30V, -51A, RDS(ON) = 8.6mW @VGS = -10V. High power and current handing capability. Surface mount Package. RoHS compliant.

文件：1.41136 Mbytes 页数：7 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -55V, -48A, RDS(ON) = 23 mW @VGS = -10V. RDS(ON) = 28 mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：535.62 Kbytes 页数：5 Pages

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丝印：LL；Package：ESC；Zener Diode Silicon Epitaxial Planar

Applications (1) Voltage surge protection Features (1) Small package (2) The typical voltage of VZ is accorded to E24 series.

文件：1.80583 Mbytes 页数：28 Pages

TOSHIBA

东芝

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -53A, RDS(ON) = 18 mW @V GS = -10V. RDS(ON) = 23 mW @V GS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：969.86 Kbytes 页数：6 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -21A, RDS(ON) = 48m W @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 62mW @VGS = -4.5V.

文件：785.15 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 102A, RDS(ON) = 3.2 m W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 4.6 mW @VGS = 4.5V.

文件：1.18113 Mbytes 页数：6 Pages

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