N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 110A, R DS(ON) = 4.0 m W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 5.5 mW @VGS = 4.5V.

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 65V, 93A, RDS(ON) = 4.5 m W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 7.4 mW @VGS = 4.5V.

文件：831.88 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 87A, RDS(ON) = 5.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant.

文件：789.26 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 90A, RDS(ON) = 5.3mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 7.5m W @VGS = 4.5V.

文件：672.6 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 42A, RDS(ON) = 9 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 13 mW @VGS = 4.5V. Applications Motor driver,DC fan.

文件：785.24 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 41A, RDS(ON) = 9.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 13mW @VGS = 4.5V.

文件：1.3331 Mbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 65V, 49A, RDS (ON) = 8.7mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications Load switch. Synchronous Rectifier. DC DC Conversi

文件：1.19175 Mbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 65V, 39A, RDS(ON) = 10.4mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：1.15154 Mbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 53A, RDS (ON) = 7.4 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS (ON) = 10 mW @VGS = 4.5V.

文件：1.19076 Mbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 28.8A, RDS(ON) = 20mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RDS(ON) = 26mW @VGS = 4.5V. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件：1.31246 Mbytes 页数：6 Pages

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