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CEZC16R10LA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 29A, RDS(ON) = 16mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 24mW @VGS = 4.5V.

文件:975.73 Kbytes 页数:6 Pages

CET-MOS

华瑞

CEZC2351

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -150V, -4.2A, RDS(ON) = 680mW @VGS = -10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 740mW @VGS = -6V.

文件:955.34 Kbytes 页数:6 Pages

CET-MOS

华瑞

CEZC2P05A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -47A, RDS(ON) = 7mW @VGS = -10V. RDS(ON) = 8.7mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 11mW @VGS = -2.5V. RDS(ON) = 16mW @VGS = -1.8V.

文件:1.03342 Mbytes 页数:6 Pages

CET-MOS

华瑞

CEZC3062

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 48A, RDS(ON) = 6.7mW @VGS = 10V. RDS(ON) = 8.7mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:854.4 Kbytes 页数:6 Pages

CET-MOS

华瑞

CEZC3108

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 34A, RDS(ON) = 12mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 19.5mW @VGS = 4.5V.

文件:707.3 Kbytes 页数:6 Pages

CET-MOS

华瑞

CEZC3112

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 37.8A, RDS(ON) = 9.7mW @VGS = 10V. RDS(ON) = 14mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件:946.09 Kbytes 页数:6 Pages

CET-MOS

华瑞

CEZC3133

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -30A, RDS(ON) = 17mW @VGS = -10V. RDS(ON) = 26mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:1.01027 Mbytes 页数:6 Pages

CET-MOS

华瑞

CEZC3178

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 25A, RDS(ON) = 20mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 32mW @VGS = 4.5V.

文件:1.05706 Mbytes 页数:6 Pages

CET-MOS

华瑞

CEZC3P07A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -37A, RDS(ON) = 10mW @VGS = -10V. RDS(ON) = 15mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:860.47 Kbytes 页数:6 Pages

CET-MOS

华瑞

CEZC4076

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 46A, RDS(ON) = 7.5mW @VGS = 10V. RDS(ON) = 9.6mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:823.39 Kbytes 页数:6 Pages

CET-MOS

华瑞

技术参数

  • BVDSS(V):

    80

  • Rds(on)mΩ@10V:

    3.6

  • ID(A):

    113

  • Qg(nC)@10V(typ):

    95

  • RθJC(℃/W):

    1.5

  • Pd(W):

    83

  • Configuration:

    Single

  • Polarity:

    N

供应商型号品牌批号封装库存备注价格
CET
25+
QFN8
1142
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
CET
25+
QFN-8
30000
代理全新原装现货,价格优势
询价
CET(华瑞)
2447
PR-PACK(5*6)
105000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
CET/華瑞
23+
DFN8
50000
全新原装正品现货,支持订货
询价
CET/華瑞
23+
QFN8
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
CET/華瑞
20+
PR-PACK(5*6)
120000
只做原装 可免费提供样品
询价
ST
23+
原厂原封
16900
正规渠道,只有原装!
询价
TOSHIBA
22+
SMD
16000
询价
CET
23+
QFN-8
12800
公司只有原装 欢迎来电咨询。
询价
CET/華瑞
23+
PR-PACK
6500
专注配单,只做原装进口现货
询价
更多CEZ供应商 更新时间2026-3-15 13:58:00